| PART |
Description |
Maker |
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| 2SC4500L 2SC4500S 2SC4500L/S |
SMALL SIGNAL TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-251AA
晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁| 1A条一c）|52AA
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-252AA
Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
| CXTA64 CXTA14 |
SMD Small Signal Transistor NPN Darlington
SURFACE MOUNT SILICON COMPLEMENTARY DARLINGTON TRANSISTORS
SMD Small Signal Transistor PNP Darlington
|
Central Semiconductor Corp.
|
| FJPF9020 FJPF9020TU |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
PNP Epitaxial Darlington Transistor
NPN Epitaxial Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC1881K |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB
Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
| BC517 BC516 |
Darlington Transistors
COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR
|
Motorola Inc
MICRO-ELECTRONICS[Micro Electronics]
|
| ZTX712 |
PNP Darlington Transistor
PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
|
Zetex Semiconductors
|
| GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| CP20251 |
PELTIER MODU LE
|
CUI INC
|
| CP85438 |
PELTIER MODU LE
|
CUI INC
|
| CP30138 |
PELTIER MODU LE
|
CUI INC,
|
